ace 14201 b p- channel enhancement mode power mosfet ver 1. 1 1 description the ACE14201B uses advanced trench technology and desgin to provide excellent r ds(on) with low gate charge. it can be used in a wide variety of applications. features ? v ds (v) = - 20v , i d = - 45a ? r ds(on) @ v gs = - 4.5 v , typ 5.8m ? r ds(on) @ v gs = - 2.5v , typ 7.2m ? r ds(on) @ v gs = - 1.8 v , typ 9m absolute maximum ratings @t a =25 unless otherwise noted parameter symbol max unit drain - source voltage v dss - 2 0 v gate - source voltage v gss 12 v drain current ( continuous ) *ac t a =25 i d - 45 a t a = 100 - 3 5 drain current ( pulsed ) *b i dm - 200 a power dissipation t a =25 p d 80 w operating temperature / storage temperature t j /t stg - 55~150 a: the value of r j a is measured with the device mounted on 1in2 fr - 4 board with 2oz. copper, in a still air environme nt with t a =25c. the value in any given application depends on the user's specific board design. b: repetitive rating, pulse width limited by junction temperature. c: the current rating is based on the t 10s junction to ambient thermal resistance rating. packaging type dfn3*3 - 8l
ace 14201 b p- channel enhancement mode power mosfet ver 1. 1 2 ordering i nformation ACE14201B x x + h electrical characteristics t a =25 , unless otherwise specified. parameter symbol test conditions min typ max unit static drain - source breakdown voltage v (br)dss v gs = 0 v, i d = - 250a - 20 v zero gate voltage drain current i dss v ds = - 16 v, v gs =0v 1 a gate threshold voltage v gs(th) v gs =v ds , i ds = - 250a - 0.4 - 0.6 - 1.0 v gate leakage current i gss v gs = 12 v, v ds =0v 100 na drain - source on - state resistance r ds(on) v gs = - 4. 5 v, i d = - 20 a 5.8 7 m v gs = - 2 .5v, i d = - 20 a 7.2 9 v gs = - 1.8 v, i d = - 20 a 9 12 forward trans conductance g fs v ds = - 5 v, i d = - 20 a 80 s diode forward voltage v sd i sd = - 20 a, v gs =0v 1.2 v diode forward current i s - 45 a switching total gate charge qg v gs = - 4.5 v, v ds = - 10 v , i d = - 20a 55 nc gate - source charge qgs 10 gate - drain charge qgd 15 turn - on delay time t d(on) v gs = - 4.5 v, v dd = - 10 v , r l = 0.5 , r g en = 3 18 ns turn - on rise time tr 42 turn - off delay time t d(off) 85 turn - off fall time tf 23 dynamic input capacitance ciss v gs =0 v, v ds = - 10 v, f=1.0mhz 3500 pf output capacitance coss 577 reverse transfer capacitance crss 445 nn: dfn3*3 - 8l pb - free halogen - free
ace 14201 b p- channel enhancement mode power mosfet ver 1. 1 3 typi cal performance characteristics
ace 14201 b p- channel enhancement mode power mosfet ver 1. 1 4
ace 14201 b p- channel enhancement mode power mosfet ver 1. 1 5 packing information dfn3*3 - 8l
ace 14201 b p- channel enhancement mode power mosfet ver 1. 1 6 notes ace does not assume any responsibility for use as critical components in life support devices or systems without the express written approval of the president and general counsel of ace electronics co., ltd. as sued herein: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and shoes failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ace technology co., ltd. http://www.ace - ele.com/
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